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The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by me...
The TRIGA IPR-R1 nuclear reactor at the Centro de Desenvolvimento da Tecnologia Nuclear CDTN/CNEN, Belo Horizonte, Brazil, has three irradiation facilities: a rotary specimen rack outside the reactor ...
A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer har...
Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into a...
Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carb...
Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiat...
Carrier removal rate in n-Si \langle P, Rh \rangle with different doping rhodium concentrations were investigated under fast neutrons irradiation. It is shown that the rate of carrier removal increase...

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