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Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
4H-SiC Double Drift Region IMPATT Device a Photo-Sensitive High-Power Source 0.7 Terahertz Frequency Regime
2010/12/6
The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experi...
Optical Response Study of the Al/a-Sic:H Schottky Diode for Different Substrate Temperatures of the R.F. Sputtered a-Sic:H Thin Film
Schottky diode Optical sensor Heterojunction Diffusion length
2010/12/7
In the present work, Schottky diodes of Al/a-SiC:H included in the structure Al/a-SiC:H/c-Si(n)/Al were fabricated and their optical response was studied in the wavelength region from 350 nm up to 100...
The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
Heterojunction temperature sensors microelectronic devices
2010/12/10
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well a...