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We fabricated and characterized the hydrogenate amorphous-silicon thin-film transistor (a-Si:H TFT) pixelelectrode circuit with the current-scaling function that can be used for active-matrix organic ...
Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electr...
The Mg-delta-doped GaN structure was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The Hall-effect measurements revealed that the electrical properties were enhanced. A twof...
Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2...
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...
The temperature characteristics of RuO2-based thick film resistors on various substratcs having different thermal expansion coefficient have been investigated.It became clear that, if the thermal expa...
Oxides of various elements have been added to RuO2 thick film resistors and the electrical properties of the resultant resistors have been examined.It is found that almost all the oxides of transition...
Investigations on RF sputtered NiCr thin film resistors, fabricated using Cu as conductor metallization, were made. The contact resistance characteristics, resistor film characteristics and TCR of the...
A study was carried out to investigate the effects of the firing temperature of thick film capacitors on the capacitance density, loss factor and breakdown voltage. These effects were studied by varyi...
Copper films (210 – 1650 Å) were deposited onto glass microslides by vacuum evaporation. The films were subjected to heat treatment at a constant rate and the variation of electrical resistance ...

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