搜索结果: 1-15 共查到“电子科学与技术 Device”相关记录16条 . 查询时间(0.062 秒)
青岛大学电子信息学院单福凯教授课题组在微电子领域权威期刊IEEE Electron Device Letters发表高水平研究论文（图）
青岛大学电子信息学院 单福凯 微电子 IEEE Electron Device Letters
2022/2/13
近日，青岛大学电子信息学院单福凯教授课题组在微电子器件研究领域取得重要进展，研究成果在微电子领域权威期刊IEEE Electron Device Letters上发表。一维金属氧化物纳米纤维由于其独特的优势，在场效应晶体管集成方面具有广阔的应用前景。静电纺丝工艺由于其大规模制备和较低的成本，被认为是最具优势的纤维制备工艺。然而，静电纺丝制备的纳米纤维之间，以及纤维与衬底之间由于简单松散的堆叠，这会...
青岛大学电子信息（微纳技术）学院单福凯教授课题组在《IEEE Electron Device Letters》上发表类脑神经器件重要成果（图）
青岛大学电子信息（微纳技术）学院 单福凯 IEEE Electron Device Letters 类脑神经器件
2022/2/13
近日，青岛大学电子信息（微纳技术）学院单福凯教授课题组在神经形态电子器件领域取得重要进展，该课题组利用电纺ZnSnO纳米线作为沟道材料，成功研制出低功耗纳米线突触晶体管。利用单个电子器件模拟神经形态功能是当前研究领域的一大热点。传统计算系统受限于冯诺依曼瓶颈的制约，在高速传输且大规模处理复杂信号时具有明显的劣势。人脑是一个具有1000亿个神经元和1000万亿个神经突触高度互联，且大规模并行的复杂网...
中山大学电子与信息工程学院Kai Wang（王凯）教授课题组论文再次入选微电子领域国际顶尖会议International Electron Device Meeting（IEDM）
中山大学电子与信息工程学院 王凯教授课题组 微电子
2017/11/15
2017年9月26日，我校电子与信息工程学院 Kai Wang（王凯）教授课题组的论文《Mechanical-Field-Coupled Thin-Film Transistor for Tactile Sensing with mN Dynamic Force Detection Capability and Wearable Self-Driven Heart Rate Monitoring ...
Under the direction of Latha Venkataraman, associate professor of applied physics at Columbia Engineering, researchers have designed a new technique to create a single-molecule diode, and, in doing so...
Researchers have made great progress in recent years in the design and creation of biological circuits — systems that, like electronic circuits, can take a number of different inputs and deliver a par...
Active and Passive Realization of Fractance Device of Order 1/2
Fractance Device of Order 1/2 impedance function the previous techniques
2010/12/6
Active and passive realization of Fractance device of order 1/2 is presented. The crucial point in the realization of fractance device is finding the rational approximation of its impedance function. ...
Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
4H-SiC Double Drift Region IMPATT Device a Photo-Sensitive High-Power Source 0.7 Terahertz Frequency Regime
2010/12/6
The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experi...
The Structural Engineering Strategy for Photonic Material Research and Device Development
arrayed nanorod materials superlattice structures
2010/12/6
A new structural engineering strategy is introduced for optimizing the fabrication of arrayed nanorod materials, optimizing superlattice structures for realizing a strong coupling, and directly develo...
HST device draws cells close--but not too close--together
electrical engineering computer science
2007/4/9
April 4, 2007,In a popular children's game, participants stand as close as possible without touching. But on a microscopic level, coaxing cells to be very, very close without actually touching one ano...
Analysis of Random Phase Error and Its Effects on Non-adjacent Channels Crosstalk of AWG Device
Crosstalk array waveguide grating Demultiplexer non-adjacent random phase errors
2010/7/16
Adjacent and non-adjacent of Crosstalk level of AWG based DWDM components between its output waveguides maybe the most important disadvantage for its application in optical communication systems compa...
Device Simulation of Double Photo-diodes
double photo-diode（DPD） optoelectronics integrated circuit (OEIC)
2010/7/16
Photo-generated carriers’ transmission delay of a CMOS-Process-Compatible double photo-diode（DPD）is analyzed by using device simulation in this paper. The carriers’ transmission delay of a DPD in CMOS...
Junction Parameter Extraction for Electronic Device Characterization
Junction Parameter Extraction Electronic Device Characterization
2010/12/7
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determin...
Blue Light Emitting Device made of cubic phase gallium nitride
LED blue LDs GaN cubic phase GaAs
2010/7/15
A metastable cubic phase GaN blue light emitting device has been fabricated. It has
demonstrated the feasibility of growing device quality metastable cubic GaN films on GaAs
substrates. A very simpl...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
2010/12/10
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...
A Detailed Analytical Study Of Non-Linear Semiconductor Device Modelling
Gunn SCR p-n junction Semiconductor Device
2010/12/14
This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n ...