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Characterization of Bi and Fe co-doped PZT capacitors for FeRAM
Characterization Bi Fe co-doped PZT capacitors FeRAM
2010/10/12
Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C...