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A plane-wave pseudopotential study on III-V zinc-blende and wurtzite semiconductors under pressure
2007/7/28
期刊信息
篇名
A plane-wave pseudopotential study on III-V zinc-blende and wurtzite semiconductors under pressure
语种
英文
撰写或编译
撰写
作者
S. Q. Wang,H. Q. Ye
第一作者单位
中国科学院金属研究所
刊物名称
J. Phys. : Condens. Matt
页面
14, ...
Pseudopotential-Based Full Zone k . p Technique for Indirect Bandgap Semiconductors: Si, Ge, Diamond and SiC
Band structure indirect bandgap semiconductors pseudopotentials
2010/4/9
The k . p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands ...