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High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control
High-temperature Thin-catalytic Gate Combustion Emissions Control
2010/10/21
4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450oC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variati...
Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices
Post Deposition Treatments Vacuum Evaporated CdTe Thin Films
2010/4/19
CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been anal...