搜索结果: 1-1 共查到“物理学 state-of-the-art undoped Si n-FinFETs”相关记录1条 . 查询时间(0.062 秒)
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Interface Trap Density Metrology state-of-the-art undoped Si n-FinFETs
2010/11/22
The presence of interface states at the MOS interface is a well-known cause of device gradation.This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can stron...