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Electrical Characterization of GaTe and GaTe:Cu Semiconductor Compounds
Electrical characterization layered semiconductors GaTe
2010/4/14
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, ...
Universal Quantum Entanglement Concentration Gate
Universal Quantum Entanglement Concentration Gate
2010/10/15
We construct a Universal Quantum Entanglement Concentration Gate (QEC-Gate). Special times operations of QECGate can transform a pure 2-level bipartite entangled state to nearly maximum entanglement. ...