理学 >>> 数学 信息科学与系统科学 物理学 化学 天文学 地球科学总论 大气科学 地球物理学 地理学 地质学 水文学 海洋科学 生物学 科学技术史
搜索结果: 16-30 共查到理学 GATE相关记录32条 . 查询时间(0.089 秒)
The surface wave environment in the GATE B/C scale is described from wave measurements made from buoys and aircraft during Phase III (September 1974). Particular emphasis is given to the wave measurem...
Moored current meter data taken over a 60-day period during GATE (GARP Atlantic Tropical Experiment) near the equator at 28°W, have been systematically searched for vertically propagating equatorially...
The numerical model of air-sea interaction previously described in Brown et al. (1982), Pandolfo and Jacobs (1972) and Pandolfo (1969) is applied over a limited horizontal portion of the GATE III Grid...
The numerical model of air-sea interaction previously described in Jacobs (1978), Pandolfo and Jacobs (1972) and Pandolfo (1969) is inserted at one horizontal grid point in the GATE III Gridded Global...
A sophisticated analysis technique is applied to a subset of pitch-roll buoy data collected by the research vessels Gilliss and Quadra during the GARP Tropical Atlantic Experiment (GATE) in September ...
Semiconductor quantum dots (known as artificial atoms) hold great promise for solid-state quantum networks and quantum computers. To realize a quantum network, it is crucial to achieve light-matter en...
Over a period of several years, RAFOS floats were launched into three levels of the deep western boundary current (DWBC) east of the northern Bahamas in order to identify and study any local recircula...
研究了有机薄膜晶体管的二氧化硅栅绝缘层的性质。二氧化硅绝缘层的制备采用热生长法,氧化气氛是O2(g)+H2O(g),工艺为干氧-湿氧-干氧的氧化过程。制得的绝缘层漏电流在10-9 A左右。以该二氧化硅作为有机薄膜晶体管的栅绝缘层,并五苯作为有源层制作了有机薄膜晶体管器件。实验表明采用十八烷基三氯硅烷(OTS)进行表面修饰的器件具有OTS/SiO2双绝缘层结构,可以有效地降低SiO2栅绝缘层的表面能...
2001Vol.36No.1pp.119-121DOI: Second Quantization Representation of Quantum Logic Gate Transformations MA Lei1,2 and ZHANG Yong-De3 1 Key Laboratory for Optical and Magn...
2007Vol.47No.5pp.821-825DOI: Implementation of a Controlled-Phase Gate and Deutsch-Jozsa Algorithm with Superconducting Charge Qubits in a Cavity SONG Ke-Hui,1,2 ZHOU Zheng-Wei,2 ...
2006Vol.46No.6pp.983-986DOI: A Scheme of Conditional Quantum Phase Gate for Dissipative Cavity QED System CAI Jian-Wu,1,2 FANG Mao-Fa,1 LIAO Xiang-Ping,1,2 and ZHENG Xiao-Juan1,3 ...
2006Vol.46No.2pp.297-302DOI: Motional Quantum-State Engineering and Implementation of a Quantum Phase-Gate for Multiple Trapped Ions YANG Wen-Xing State Key Laboratory o...
2003Vol.39No.3pp.271-274DOI: Normally Ordered Quantum Gate Operators for Continuum Variables as Images of Classical Transforms FAN Hong-Yi,1,2 LU Hai-Liang,1 and FAN Yue2 ...
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bri...
4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450oC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variati...

中国研究生教育排行榜-

正在加载...

中国学术期刊排行榜-

正在加载...

世界大学科研机构排行榜-

正在加载...

中国大学排行榜-

正在加载...

人 物-

正在加载...

课 件-

正在加载...

视听资料-

正在加载...

研招资料 -

正在加载...

知识要闻-

正在加载...

国际动态-

正在加载...

会议中心-

正在加载...

学术指南-

正在加载...

学术站点-

正在加载...