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中国科学院微电子研究所专利：低源漏接触电阻MOSFETs及其制造方法
A Fubute Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in DG MOSFETs
Double gate MOSFET Multi subband Boltzmann transport equation 2D electron gas deterministic solver
2015/5/6
We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation (MSBTE) for the two dimensional electron gas. The MSBTE consists of a set of Boltzmann transport equ...
Low Voltage Squarer Using Floating Gate MOSFETs
Analog signal processing floating gate MOSFETs low-voltage
2010/2/2
A new low-voltage floating gate MOSFET (FGMOS)
based squarer using square law characteristic of the FGMOS is
proposed in this paper. The major advantages of the squarer are simplicity,
rail-to-rail...
电离辐射中SOI MOSFETs的背栅异常kink效应研究
X射线 SOI MOSFETs
2008/10/20
采用10keV X射线研究了部分耗尽SOI MOSFETs的总剂量辐射效应. 实验结果显示，在整个辐射剂量范围内，前栅特性保持良好；而nMOSFET和pMOSFET的背栅对数Id-Vg2曲线中同时出现了异常kink效应. 分析表明电离辐射在埋氧/顶层硅（BOX/SOI）界面处产生的界面态陷阱是导致异常kink效应产生的原因. 基于MEDICI的二维器件模拟结果进一步验证了这个结论.
全耗尽SOI MOSFETs阈值电压和电势分布的温度模型
全耗尽SOI MOSFETs 电势 阈值电压
2008/10/7
提出了一个全耗尽SOI MOSFETs器件阈值电压和电势分布的温度模型. 基于近似的抛物线电势分布模型，利用适当的边界条件对二维的泊松方程进行求解. 同时利用阈值电压的定义得到了阈值电压的模型. 该温度模型详细地研究了电势分布和阈值电压跟温度之间的变化关系，同时还近似地探讨了短沟道效应. 为了进一步验证模型的正确性，利用SILVACO ATAS软件进行了相应的模拟. 结果表明，模型计算与软件模拟吻...
Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing
n-MOSFET Defects Stress Hot-carrier Aging
2010/12/8
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spati...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
2010/12/10
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...