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GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...