搜索结果: 1-15 共查到“光学工程 AlGaAs”相关记录15条 . 查询时间(0.126 秒)
Novel 2× ×2 Wide-Angle AlGaAs/GaAs Carrier-Injection Optical Switch with Reduced Power Consumption
Optical switching devices Integrated optics devices
2015/6/5
We demonstrate a 2×2 AlGaAs/GaAs optical switch based on our wide-angle design including current-spreading restriction, curved electrodes, double-reflection interfaces, and graded heterojunctions. The...
Fabry-Perot Resonator Based on InGaAs/AlGaAs/AlAsSb Quantum Well Waveguide and its all-optical Tuning at GHz-Repetition Rate
Resonator Based GaAs/AlGaAs/AlAsSb Quantum Waveguide all-optical GHz-Repetition Rate
2015/7/17
We report a Fabry-Perot resonator constructed from InGaAs/AlGaAs/AlAsSb quantum well waveguide,which can be optically tuned. Tuning using optical pulses at 1.552μm at 1GHz-repetition-rate is achieved ...
掺杂GaAs/AlGaAs超晶格的激发态向受主中心跃迁的发光
GaAs/AlGaAs超晶格 激发态 受主中心
2009/5/19
掺杂GaAs/AlGaAs超晶格的激发态向受主中心跃迁的发光。
Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology
photoluminescence spectroscopy quantum cascade lasers
2011/5/11
In this paper, we present the application of photoluminescence spectroscopy as a diagnostic method for evaluation of correctness and homogeneity of AlGaAs/GaAs test superlattices used in the developm...
(100) GaAs surface treatment prior to contact metal deposition in AlGaAs/GaAs quantum cascade laser processing
GaAs surface treatment
2011/5/11
The effects of HCl-based chemical and Ar+ sputter etching treatment on (100) GaAs surface properties with the aim to develop the procedure of surface preparation before metal deposition have been inve...
New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors
growth models metalorganic vapor phase epitaxy (MOVPE)
2011/5/10
In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of ...
Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers
ohmic contacts sputtering
2011/5/10
This paper reports on the results of optimization of ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during optimization concerned surface preparation, evaporat...
InGaAlAs/AlGaAs应变量子阱大功率激光器研究
激光器 应变量子阱 半导体激光器
2008/10/21
在国内首次提出用InGaAlAs做垒、AlGaAs做阱的808nm量子阱大功率半导体激光器新结构。该结构具有激射波长容易控制、波长一致性好、器件寿命长等优点。研制成功InGaAlAs/AlGaAs808应变量子阱高亮度大功率激光器样管。激光器的单面输出功率＞1W（条宽100mm）、器件寿命＞10000小时，为同类器件的较高水平，已达到实用化要求。
分子束外延GaAs/AlGaAs高速器件与光电子器件材料
分子束外延 高速器件 光电子器件
2008/9/23
分子束外延（MBE）技术是研制超薄层微结构材料的主要技术手段之一。该成果在改进和完善国产MBE设备的同时，研制成功了高质量的GaAs/AlGaAsHEM材料、量子阱激光器材料和SEED材料。已用上述高速器件材料制作出11级和25级HEMT环形振荡器，其门延迟时间达32ps/门（77K）；研制生长的量子阱激光器材料实现了阈值低、波长可调的激光器，材料的阈电流密度已达94/cm^2；研制生长的自电光效...
研究了质子轰击条形双异质结构(DH)激光器的退化特性及P-I 特性,发现一般快退化器件 CW工作寿命小于 200小时.损坏后用 EBIC方法观察到有源区中增殖着暗线缺陷. DH激光器CW工作寿命超过200小时,而且每千小时的退化率小于4％的器件,一般cw工作寿命都能超过5000小时,有的器件已超过8000小时***仍在继续工作. 大部分器件具有良好的线性P-I特性,也有的观察到出现扭折“Kink”...
AlAs/AlGaAs的湿氧氧化及其在VCSEL制备中的应用
2007/7/28
专著信息
书名
AlAs/AlGaAs的湿氧氧化及其在VCSEL制备中的应用
语种
中文
撰写或编译
作者
黄静,郭霞,渠红伟,廉鹏,朱文军,邹德恕,沈光地
第一作者单位
出版社
半导体光电, 24(5), 341, 2003
出版地
出版日期
2003年
月
日
标准书号
介质类型
页数
字数
开本
相关项目
新型可调谐高效多源纵向光耦合垂直腔面发射激光器研制
High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
high power semiconductor laser
2011/5/4
A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diod...
Designing of GaAs/AlGaAs multiple quantum wells to enhance magnetooptical Kerr effect
magnetooptical Kerr effect (MOKE)
2011/5/4
In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quantum wells (MQWs). Firstly, comparing the measured spectra of MOKE with the theoretical ones we establ...
Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities
second-harmonic generation AlGaAs/AlxOy tightly resonant cavities
2015/8/11
We demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever report...
AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region
heterojunction phototransistor Zn delta-doped GaAs EC-V measurements photovoltage spectroscopy
2011/4/27
The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT tra...