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搜索结果: 1-15 共查到工学 photodetectors相关记录19条 . 查询时间(0.234 秒)
Physicists at the University of California, Riverside have developed a photodetector – a device that senses light – by combining two distinct inorganic materials and producing quantum mechanical proce...
Researchers from the University of Illinois at Urbana-Champaign have demonstrated a new approach to modifying the light absorption and stretchability of atomically thin two-dimensional (2D) materials ...
A heterogeneously integrated WDM receiver based on an AWG demultiplexer and hybrid silicon/InGaAs detectors is presented in a novel platform that combines hybrid silicon components with ultra-low loss...
Influence of duty ratio of metallic gratings applied in quantum well infrared photodetector (QWIP) with detection ranging from 3 μm to 5 μm was studied in this paper. The influence on longer enhanced ...
Great progress has been made in the past decade in developing high-current photodetec-tors, but the modeling of these devices has not kept pace. The status of the devices and the models is reviewed.
We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detector...
Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths abo...
Error-free detection of a single-polarization 50 Gb/s NRZ-QPSK signal using a coherent detector based on monolithic integration of a waveguide 90°hybrid with two pairs of high-speed balanced photo-det...
Ge-on-Si waveguide integrated photodetectors including Metal-Semiconductor-Metal (MSM), vertical PIN and lateral PIN diodes are reviewed.
We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of...
In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of ...
We present experimental results of a 4-channel demultiplexer with integrated photodetectors. The device consists of a silicon-on-insulator planar concave grating demultiplexer and heterogeneously inte...
We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 μ m-diameter at a wavelength of 1550 nm.
Resonant cavity enhanced (RCE) infrared photodetectors are used in many applications due to their high quantum efficiency and large bandwidth. Therefore, wide device diversity is desired. In this pape...
Functionally graded materials (FGM) find widespread for mechanical applications. Nowadays, they become more and more attractive in fabrication of electronic and optoelectronic devices. This is due to ...

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