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西安电子科技大学电子工程学院模拟电子线路英文课件Chapter6 Field-Effect Transistor
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter6 Field-Effect Transistor
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter6 Field-Effect Transistor。
Optimal Wire and Transistor Sizing for Circuits with Non-Tree Topology
Optimal Wire Transistor Sizing Circuits Non-Tree Topology
2015/8/14
Conventional methods for optimal sizing of wires and transistors use linear RC circuit models and the Elmore delay as a measure of signal delay. If the RC circuit has a tree topology the sizing proble...
The Potentialities of Electroless Gold Plating of Transistor Headers
Electroless Gold Transistor Headers
2009/7/30
The Potentialities of Electroless Gold Plating of Transistor Headers.
Application of Poly-Silicon Thin-Film Transistor Re-crystallized by Pulse Laser for Display Devices
Laser beam annealing Low-temperature processing Poly-Si
2009/6/9
Laser re-crystallization is being actively investigated to fabricate low temperature, polycrystalline silicon, thin-film transistors (TFTs) onto glass substrate for use in active-matrix liquid crystal...
A high Speed 8 Transistor Full Adder Design using Novel 3 Transistor XOR Gates
XOR gate full adder improvement in speed area minimization
2010/2/2
The paper proposes the novel design of a 3T XOR
gate combining complementary CMOS with pass transistor logic.
The design has been compared with earlier proposed 4T and 6T XOR
gates and a significan...
A Novel Four-Transistor SRAM Cell with Low Dynamic Power Consumption
Positive feedback leakage current read operation write operation
2010/2/2
This paper presents a novel CMOS four-transistor
SRAM cell for very high density and low power embedded SRAM
applications as well as for stand-alone SRAM applications. This cell
retains its data wi...
Transistor laser story in EurekaAlert（图）
Transistor laser electrical and computer engineering
2007/1/31
17 Jan 2007，The transistor laser, being developed by electrical and computer engineering professors Milton Feng and Nick Holoynak, Jr. made Eurekalert's ?0 most accessed stories in 2006.?EurekAlert! i...
Beyond silicon: New transistor technology may power next microelectronic devices（图）
transistor technology microelectronic devices
2006/12/14
December 12, 2006，MIT engineers have demonstrated a technology that could introduce an important new phase of the microelectronics revolution that has already brought us iPods, laptops and much more.
All-optical transistor action with bistable switching in a photonic crystal cross-waveguide geometry
All-optical transistor action bistable switching photonic crystal cross-waveguide geometry
2015/8/11
We demonstrate all-optical switching action in a nonlinear photonic crystal cross-waveguide geometry with instantaneous Kerr nonlinearity, in which the transmission of a signal can be reversibly switc...
Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
Real space transfer (RST) Parameter extraction
2010/12/7
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter e...
Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Thermal Effect Frequency Response Heterojunction Bipolar Power Transistor
2010/12/8
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high cu...
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...
Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor
Junction Parameters an Electrically Stressed NPN Bipolar Transistor
2010/12/8
The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameter...
GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...
High Frequency Transistor Models for Low Noise Applications
High Frequency Transistor Models Low Noise Applications
2010/7/15
Mobile communication is one of the fastest growing markets and demands a significant part of the integrated circuitsales. In the past transceivers in the GHz range have required silicon bipolar transi...