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考虑3种特征尺寸的超深亚微米SOI NMOSFET的中子辐照效应。分析了中子位移辐照损伤机理，数值模拟了3种器件输出特性曲线随能量为1 MeV的等效中子在不同辐照注量下的变化关系及中子辐照环境下器件工艺参数对超深亚微米SOI NMOSFET的影响。数值模拟部分结果与反应堆中子辐照实验结果一致。
Investigation on a solution to improve the irradiation reliability of SOI NMOSFET
SOI irradiation total dose effect NMOSFET
2009/8/14
A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer har...
Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide
silicon on insulator total-dose irradiation effect H gate subthreshold charge separation photoluminescence
2009/7/31
In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/ SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on
the ...