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The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
A. Semiconductors B. Impurities in semiconductors C. Optical properties D. Hall effect measurement
2011/12/13
The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of ...
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
2007/7/28
期刊信息
篇名
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
语种
英文
撰写或编译
作者
Lu Youming,Shen Dezhen,Liu Yuchun
第一作者单位
刊物名称
Chin.Phys. Lett
页面
19(1) 1152(2002).
出版日...
Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...
Characterization of PbTe p-n+ Junction Grown by Molecular Beam Epitaxy
PbTe p-n+ Junction Molecular Beam Epitaxy
2010/10/22
In this work we investigate the electrical properties of PbTe p ¡ n+ junction. Mesa diodes were fabricated from p ¡ n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy....