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Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
Liquid phase epitaxy Surface structure Quaternary semiconductors
2010/9/29
We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxy on (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature....