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采用分子动力学(MD)方法和COMPASS力场，研究了键合剂对丁羟推进剂中端羟基聚丁二烯(HTPB)与Al/Al2O3之间界面的吸附能与力学性能。结果表明，键合剂在Al2O3晶面的吸附能高于HTPB在Al2O3晶面的吸附能，而在Al晶面的规律并不明显。键合剂(TEA)与HTPB在Al2O3晶面吸附能远高于在Al晶面，Al2O3晶体(010)晶面高于 (001)晶面，Al晶体(001)晶面高于(01...
Photoluminescence Characterization of Al/Al2O3/InP MIS Structures passivated by anodic oxidation
Indium phosphide MIS structures Photoluminescence
2010/4/12
Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150 Å were used to passivate the interface In...